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2022-09-24 21:11:22
MJE182G Bipolar Transistor - Bipolar Junction Transistor (BJT) Original Spot
Keywords: MJE182G
Manufacturer: ON Semiconductor
Product Category: Bipolar Transistor - Bipolar Junction Transistor (BJT)
RoHS: Details
Mounting Style: Through Hole
Package/Case: TO-225-3
Transistor Polarity: NPN
Configuration: Single
Collector-emitter maximum voltage VCEO: 80 V
Collector-Base Voltage VCBO: 100 V
Emitter-Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 1.7 V
Maximum DC collector current: 3 A
Pd-Power Dissipation: 1.5 W
Gain bandwidth product fT: 50 MHz
Minimum operating temperature: - 65 C
Maximum operating temperature: + 150 C
Series: MJE182
Package: Bulk
Height: 11.04 mm
Length: 7.74 mm
Technology: Si
Width: 2.66 mm
Trademark: ON Semiconductor
Collector Continuous Current: 3 A
DC Collector/Base Gain hfe Min: 50
Product Type: BJTs - Bipolar Transistors