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2022-09-23 17:22:28
SQM110N05-06L-GE3
Manufacturer: Vishay
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case:TO-263-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 55 V
Id-Continuous Drain Current: 110 A
Rds On-drain-source on-resistance: 4.7 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 1.5 V
Qg-gate charge: 110 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 175 C
Pd - Power Dissipation: 157 W
Channel Mode:Enhancement
Qualification: AEC-Q101
Brand Name: TrenchFET
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: Vishay Semiconductors
Configuration:Single
Fall Time: 13 ns
Forward Transconductance - Min: 90 S
Product Type:MOSFET
Rise time: 13 ns
Series: SQ
800
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical turn-off delay time: 37 ns
Typical turn-on delay time: 12 ns
Unit weight: 4 g