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2022-09-23 17:22:28
IXFP22N65X2M
ManufacturerIXYS
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
On-resistance (max) at different Id, Vgs 145mΩ @ 11A, 10V
Vgs(th) (max) at different Id 5V @ 1.5mA
Gate charge at different Vgs? (Qg) (max) 37 nC @ 10 V
Vgs (max) ±30V
Input Capacitance (Ciss) (Max) at Vds 2190 pF @ 25 V
FET function-
Power Dissipation (Maximum) 37W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Device Package TO-220 Isolated Standard
Package/Case TO-220-3 Full Package, Isolated Tabs