CL21A226MAQNNNE product detailed specifications

Standard package 2,000

Capacitor 22μF

Voltage - 25V nominal

Tolerance ±20%_Temperature Coefficient X5R

Mounting Type Surface Mount, MLCC

Operating temperature -55°C ~ 85°C

Apply General Purpose

grade-

Bag/Box 0805 (2012 Metric)

Size/Dimensions 0.079 L x 0.049 W (2.01mm x 1.25mm)

Height-Seated (Max)-

Thickness (max) 0.055 (1.40mm)

Lead Spacing-

Features-

Packaging Tape & Reel (TR)

lead to style-;;other names;

Match code KC22U0805X5R025M NORM

style CHIP

Electrode BME

T(A)min-55°C

Tape Type BLISTER

Unit package 2000

Standard lead time 20 weeks

MOQ 2000

C(N) 22μF

Package REEL BLI

T(A) max +85°C

Lead-free DefinRoHS-conform

Packaging 0805

Case size 0805

carNO

Terminal NISN

Tolerance 20%_V (N) 25V

Medium X5R

Capacitor 22μF

Mounting Type Surface Mount, MLCC

Voltage - 25V nominal

Temperature coefficient X5R

Dimensions/Dimensions 0.079 L x 0.049 W (2.01mm x 1.25mm)

Application ScopeGeneral Purpose

Operating temperature -55°C ~ 85°C

Standard package 2,000

Thickness (max) 0.055 (1.40mm)

Package/Enclosure 0805 (2012 Metric)

Other name1276-2908-2

RoHS Directive Lead free / RoHS Compliant

The skyrocketing price of the global memory market a few years ago probably still has lingering fears for IT industry players! With the smoke of this "chip war", the relevant production lines of massive investment in China's storage industry have been launched one after another, and it is expected to gradually bloom this year. As a result, a situation where China, the United States, and South Korea may compete for hegemony will soon be formed, and the future changes of the storage industry will also be more turbulent. Especially with the deployment of 5G, the popularization of artificial intelligence, big data and the Internet of Things, data storage has entered a long-term upward and stable growth channel. According to predictions, the generation of human data in 2023 will exceed 103 ZB (data unit magnitude GB\TB\PB\EB\ZB)!

In the field of storage technology, the key data storage of low-capacity and density embedded systems has always seemed calm. Among them, FRAM technology, which uses the ferroelectric effect of ferroelectric crystals to realize data storage, has changed from a niche product to covering almost most of them. storage technology in the field of application. In the 1980s, the first successful FRAM circuit came out, and its general function was considered to replace conventional memories such as DRAM, SRAM and EEPROM. From the early Ramtron, Celis Semiconductor, Hynix, Macronix, Infineon, Samsung, Sanyo, TI, Toshiba and many other tycoons have entered the game to "fight", and now a few FRAM manufacturers with "the leftover are king" coexist. FRAM technology has continued to break through and develop in the past decades of competition, and finally gradually entered the mainstream industry and application "C" bit"!

Fujitsu Semiconductor is one of the well-known FRAM solution providers in the industry. In an interview not long ago, Feng Yixin, director of the product management department of Fujitsu Electronic Components (Shanghai) Co., Ltd., told the author: "The advantages of Fujitsu FRAM can be summed up as a set of data: 10 trillion times, 20 years, 3.7 billion! 10 trillion The second represents the high read and write durability of Fujitsu's FRAM products, and 20 years of Fujitsu's valuable experience in focusing on FRAM, successful mass production and continuous innovation, 3.7 billion represents the cumulative shipments since mass production. Doubt, Fujitsu FRAM is widely empowering innovative applications in all walks of life!"

Deeply cultivated in the field of measurement, FRAM empowers 80 million meter products

The industrial field can be said to be the "traditional advantage project" of Fujitsu FRAM. From the early development of industrial three-phase electricity meters and special industrial equipment, to the smart meters such as water, electricity and heat that can be seen everywhere in "ordinary people's homes", Fujitsu FRAM is competitive. The cost-effective advantage further accelerates its promotion to a wider range of industrial applications. "FRAM ferroelectric memory has been widely used as a standard memory in the smart meter industry, and its data read and write durability of up to 10 trillion times ensures the data reliability of the meter, and the data is written once in 1 second. It can last up to 10 years,” Feng Yixin revealed to the author, “Fujitsu FRAM has delivered 80 million pieces to global meter customers, and has a very high market share in China and overseas. It has been used by Wasion Group, Itron, Linyang Energy, It is adopted by mainstream electricity meter suppliers in the industry such as Haixing Power and Siemens.”

At the same time, Fujitsu FRAM has gradually entered the major global suppliers of smart water and gas meters such as Wuxi Jucheng, Zhejiang Weixing, EMERSON, E+H, TEPLOKOM, etc., and has become a standard component for accurately recording and storing key data. Unlike the electricity meter directly connected to the power supply, the water and gas meter solution must rely on battery power, so power consumption becomes the key. Fujitsu FRAM has the advantages of low operating current and low power consumption. The use of FRAM in the solution means that the battery can be miniaturized, and it can prolong the battery life, simplify the circuit system design, and reduce the overall BOM cost.

For special industrial applications in harsh environments, Fujitsu also launched the FRAM ferroelectric memory MB85RS64TU in 2018 with an operating temperature as low as -55°C, further extending the extreme low temperature of previous -40°C products and maintaining this feature far exceeding the competition opponent's advantage. It can be said that this product is especially suitable for equipment for mining natural gas and oil resources in extremely cold regions, as well as measuring equipment, flow meters and special robots, which has become a major breakthrough for Fujitsu to explore extreme application scenarios!

In the battle for IoT memory, these features of FRAM have become the key

With the advent of the era of the Internet of Everything, the Internet of Things has brought new challenges to the data storage capabilities of terminal devices, such as ensuring data reliability, fast data reading and writing, and ultra-low operating power consumption. When asked about the application of FRAM in the IoT field, Feng Yixin said: "A very important application of FRAM in IoT is RFID. FRAM RFID has three significant advantages of radiation resistance, low power consumption and fast reading and writing, which can ensure IoT Data reliability in applications, Fujitsu is working closely with the world's leading label/inlay manufacturers in the RFID industry."

It is worth mentioning that Fujitsu FRAM RFID technology is widely known as the optimal solution to replace barcodes in logistics inventory management. Similar electronic paper using FRAM RFID technology in the retail industry consumes power only when the display data is rewritten, so it can be directly driven without a battery. This is the advantage of FRAM's low power consumption!

In addition, due to the radiation resistance of Fujitsu FRAM RFID, it has outstanding advantages in application scenarios that require radiation sterilization in the medical field. After FRAM RFID is embedded in pharmaceuticals, biochemical preparations, plasma preparations, medical equipment, etc., the radiation sterilization process of the entire product can be traced, helping the management of pharmaceutical products to be more efficient and safer. Feng Yixin concluded: "In high-end medical equipment that requires high reliability and radiation resistance, FRAM has nearly 100% applications, and continues to expand new technologies!"

Breakthrough in high temperature characteristics, and storage of key automotive information is favored

Since 2017, Fujitsu has successively launched FRAM products MB85RS256TY, MB85RS128TY, MB85RS64VY and MB85RS2MTY suitable for automotive electronic applications. These devices can operate in a high temperature environment of up to 125°C and are designed for the automotive industry and industrial control equipment with motors. It was built and verified and passed the stringent AEC Q100 standard in the automotive industry in the same year.

Feng Yixin said: "The automobile industry is undergoing the largest transformation in history. On the one hand, it is the popularization of new energy vehicles. , Fujitsu R&D personnel started to redesign the internal circuit, so that the working temperature range of the product was expanded to -40~125℃, which further improved the reliability of the product.”

The development of new energy vehicles and autonomous driving technology requires the on-board electronic control system to continuously increase the demand for accessing various sensor data, so the demand for high-performance non-volatile memory technology is becoming more and more prominent. FRAM has the advantages of high-speed random access, high read and write durability, and non-volatility, which can be perfectly adapted to such applications. Fujitsu automotive grade FRAM products can support tire pressure monitoring (TPMS), airbag data storage, accident data recorder (EDR), battery management system (BMS), automotive driver assistance system (ADAS), and navigation and infotainment systems, etc. Real-time and continuous data storage in applications. After just two years of market promotion, Fujitsu's automotive-grade FRAM products have successfully entered many Tier-1 OEMs such as Dongfeng, King Long, Yutong, SAIC-GM-Wuling, BMW Brilliance, FAW, Yujie, Jianghuai, Chery and other OEMs. , Tier-2 supply chain, the market performance is very good!

FRAM, NRAM and ReRAM simultaneously, Fujitsu's differentiated market competition strategy

In fact, in addition to the above fields, Fujitsu FRAM has been widely used in more fields, including medical, industrial and so on. In order to meet the needs of more differentiated applications, Fujitsu has also invested in the development and trial production of next-generation high-performance storage products in recent years - nano-random random access memory NRAM and variable resistance random access memory ReRAM. The former has both the high-speed writing and high reading and writing durability of FRAM, and has the same large capacity and cost as NOR Flash, and achieves very low power consumption. Fujitsu's first-generation NRAM products and 16Mbit DDR3 SPI interface products are the most It will be launched at the end of 2020; the latter has been successfully launched into the market and mass-produced. The first 8Mbit MB85AS8MT is characterized by extremely low average current, which only needs 0.15mA to read data at 5MHz operating frequency, which makes the need for transparent Devices that run on battery power and read data frequently achieve the lowest power consumption. "In short, FRAM is used for data recording; ReRAM can replace large-capacity EEPROM; NRAM is used for data recording and code storage, and can also replace NOR Flash." Feng Yixin concluded. Fujitsu, which is good at entering the market with differentiated and unique performance products, is about to build a more complete array of embedded system storage products, which is bound to rapidly expand into a new situation in the storage industry.

Hong Kong Xinrui Electronics Co., Ltd., 18 years of professional component distributors (authorized and non-authorized brands), one-stop terminal manufacturer support: (quality assurance and integrity management) is the company's commitment to provide customers with brand original semiconductors, electronic components Terminal supporting market, focusing on ESD/TVS electrostatic protection diodes, LDO low-power voltage regulators, MOS tubes, battery charging and management power supplies, LEDs, optocouplers, resistors and capacitors, PCB solutions (wireless Bluetooth solutions, Bluetooth sports version solution one-stop, speakers, wireless power bank).

Main products: ESD electrostatic diodes, TVS diodes, battery charging and management power supplies, MOS tubes, LDO low-power voltage regulators.

Company: Hong Kong Xinrui Electronics Co., Ltd.

Contact: Miss Yao

Mobile: 13725590222

Tel: 0755-83780666/83265111

Fax: 0755-82800889

QQ: 3373563833

Address: 26B, Block B, Huaqiang Plaza, Futian North Road, Futian District, Shenzhen

Company website: www.xrdz-hk.com

Hong Kong Xinrui Electronics Co., Ltd. part of the spot:

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For more models, please inquire:

Hong Kong Xinrui Electronics Co., Ltd. is a professional supplier of integrated circuits and has many years of sales experience in the bank! With a large stock of stock, integrity-based, customer first, the quality of products for customers!

Due to the large number of company models, it is impossible to upload them one by one. If you can't find the product you want on the website, please contact the salesperson. Our company can provide electronic components distribution service.

Company: Hong Kong Xinrui Electronics Co., Ltd.

Contact: Miss Yao

Mobile: 13725590222

Tel: 0755-83780666/83265111

Fax: 0755-82800889

QQ: 3373563833

Address: 26B, Block B, Huaqiang Plaza, Futian North Road, Futian District, Shenzhen

Company website: www.xrdz-hk.com

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Hong Kong Xinrui Electronics Co., Ltd. is a professional supplier of integrated circuits and has many years of sales experience in the bank! With a large stock of stock, integrity-based, customer first, the quality of products for customers!

Due to the large number of company models, it is impossible to upload them one by one. If you can't find the product you want on the website, please contact the salesperson. Our company can provide electronic components distribution service.

Company: Hong Kong Xinrui Electronics Co., Ltd.

Contact: Miss Yao

Mobile: 13725590222

Tel: 0755-83780666/83265111

Fax: 0755-82800889

QQ: 3373563833

Address: 26B, Block B, Huaqiang Plaza, Futian North Road, Futian District, Shenzhen

Company website: www.xrdz-hk.com