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2022-09-24 21:26:48
FP50R12KT4 Shenzhen Youdu Technology Co., Ltd.
Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: 3-Phase
Collector-emitter maximum voltage VCEO: 1200 V
Collector-Emitter Saturation Voltage: 2.25 V
Continuous collector current at 25 C: 50 A
Gate-Emitter Leakage Current: 100 nA
Pd-Power Dissipation: 280 W
Package/Case: Econo 3
Minimum operating temperature: - 40 C
Maximum operating temperature: + 150 C
Package: Tray
Height: 17 mm
Length: 107.5 mm
Technology: Si
Width: 45 mm
Trademark: Infineon Technologies
Mounting style: Chassis Mount
Gate/Emitter Max Voltage: 20 V
Product Type: IGBT Modules
Factory Packing Quantity: 10
Subcategory: IGBTs