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2022-09-24 21:26:48
BSC018NE2LS
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Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: TDSON-8
Number of channels: 1 Channel
Transistor Polarity: N-Channel
Vds-drain-source breakdown voltage: 25 V
Id-Continuous Drain Current: 100 A
Rds On-Drain Source On Resistance: 1.8 mOhms
Vgs - Gate-Source Voltage: 20 V
Vgs th-gate-source threshold voltage: 2 V
Qg-gate charge: 19 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-Power Dissipation: 69 W
Height: 1.27 mm
Length: 5.9 mm
Transistor Type: 1 N-Channel
Width: 5.15 mm
Forward Transconductance - Min: 140 S
Fall Time: 3.6 ns
Rise Time: 4.4 ns
Factory Packing Quantity: 5000
Typical turn-off delay time: 26 ns
Typical turn-on delay time: 5.5 ns