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TPS1120DR Data Sheet

Manufacturer: Texas Instruments

Product Category: MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: SOIC-8

Number of channels: 2 Channel

Transistor Polarity: P-Channel

Vds-drain-source breakdown voltage: 15 V

Id-Continuous Drain Current: 1.17 A

Rds On-Drain Source On Resistance: 180 mOhms

Vgs - Gate-Source Voltage: 2 V, - 15 V

Minimum operating temperature: - 40 C

Maximum operating temperature: + 125 C

Pd-Power Dissipation: 840 mW

Configuration: Dual

Channel Mode: Enhancement

Package: Cut Tape

Package: MouseReel

Package: Reel

Height: 1.75 mm

Length: 4.9 mm

Product: MOSFET Small Signal

Series: TPS1120

Transistor Type: 2 P-Channel

Type: PMOS Switches

Width: 3.9 mm

Trademark: Texas Instruments

Fall Time: 10 ns

Product Type: MOSFET

Rise time: 10 ns

Factory Packing Quantity: 2500

Subcategory: MOSFETs

Typical turn-off delay time: 13 ns

Typical turn-on delay time: 4.5 ns

Unit weight: 76 mg