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SI4816BDY-T1-GE3 Data Sheet

Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: SO-8

Number of channels: 2 Channel

Transistor Polarity: N-Channel

Id-Continuous Drain Current: 6.8 A, 11.4 A

Rds On-Drain Source On Resistance: 11.5 mOhms, 18.5 mOhms

Vgs th - gate-source threshold voltage: 1 V

Vgs - Gate-Source Voltage: 10 V

Qg-gate charge: 7.8 nC, 11.6 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 1.4 W, 2.4 W

Configuration: Dual

Channel Mode: Enhancement

Brand Name: TrenchFET

Package: Cut Tape

Package: MouseReel

Package: Reel

Height: 1.75 mm

Length: 4.9 mm

Series: SI4

Transistor Type: 2 N-Channel

Width: 3.9 mm

Brand: Vishay / Siliconix

Forward Transconductance - Min: 30 S, 31 S

Fall Time: 9 ns, 11 ns

Product Type: MOSFET

Rise time: 9 ns, 9 ns

Factory Packing Quantity: 2500

Subcategory: MOSFETs

Typical turn-off delay time: 24 ns, 31 ns

Typical turn-on delay time: 11 ns, 13 ns

Part number alias: SI4816DY-T1-E3-S

Unit weight: 187 mg