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STD2HNK60Z Data Sheet

Manufacturer: STMicroelectronics

Product Category: MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: TO-252-3

Number of channels: 1 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 600 V

Id-Continuous Drain Current: 2 A

Rds On-Drain Source On Resistance: 4.8 Ohms

Vgs th-gate-source threshold voltage: 3 V

Vgs - Gate-Source Voltage: 10 V

Qg-gate charge: 11 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 45 W

Configuration: Single

Channel Mode: Enhancement

Brand Name: SuperMESH

Package: Cut Tape

Package: MouseReel

Package: Reel

Height: 2.4 mm

Length: 6.6 mm

Series: STD2HNK60Z

Transistor Type: 1 N-Channel Power MOSFET

Width: 6.2 mm

Brand: STMicroelectronics

Forward Transconductance - Min: 1.5 S

Fall Time: 50 ns

Product Type: MOSFET

Rise time: 30 ns

Factory Packing Quantity: 2500

Subcategory: MOSFETs

Typical turn-off delay time: 23 ns

Typical turn-on delay time: 10 ns

Unit weight: 4 g