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2022-09-24 21:37:18
XM31200V, 450A SiC half-bridge module
The XM3 power module platform was developed to maximize the benefits of silicon carbide while keeping module and system designs robust, simple and cost-effective. At half the weight and volume of standard 62 mm modules, the XM3 power module maximizes power density while minimizing loop inductance and enabling a simple power bus. The XM3's SiC-optimized package enables continuous operation at a +175°C junction temperature and utilizes a high-reliability silicon nitride (Si3N4) power substrate to ensure mechanical stability under extreme conditions. The XM3 is ideal for demanding applications such as EV chargers, UPS and traction drives.
characteristic
High power density base surface
High Junction Temperature (+175°C) Operation
3rd Generation SiC MOSFET Technology for Conduction Optimization
Silicon Nitride Insulator and Copper Substrate
application
Electric Motors and Traction Drives
vehicle fast charger
ups
Smart grid/grid-connected distributed generation
CGD12HBXMP, CGD12HB00D