-
2022-09-24 21:37:18
150VN channel X4 class super junction power MOSFET, IXTP130N15X4
Power semiconductor devices developed using charge compensation principles and proprietary process technologies are now available, resulting in significantly lower on-resistance [RDS(ON)] and gate charge (Qg) of power MOSFETs. The low on-resistance reduces conduction losses and also reduces the energy stored in the output capacitor, thereby minimizing switching losses. Low Qg provides higher efficiency at light loads and lower gate drive requirements. Additionally, these MOSFETs are avalanche capable and have excellent dv/dt performance. Their on-resistance has a positive temperature coefficient, and they can be operated in parallel for higher current requirements.
characteristic
Low RDS(on) and low Qg
dv/dt robustness
Avalanche resistance
International standard package
application
Synchronous Rectification in Switching Power Supplies
Motor control (48 V to 80 V systems)
DC-DC converter
ups
Electric forklift
Class D Audio Amplifier
telecommunication system