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SI2305CDS-T1-GE3 Data Sheet

Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: SOT-23-3

Number of channels: 1 Channel

Transistor Polarity: P-Channel

Vds-drain-source breakdown voltage: 8 V

Id-Continuous Drain Current: 5.8 A

Rds On-Drain Source On Resistance: 35 mOhms

Vgs th-gate-source threshold voltage: 400 mV

Vgs - Gate-Source Voltage: 4.5 V

Qg-gate charge: 30 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 1.7 W

Configuration: Single

Channel Mode: Enhancement

Brand Name: TrenchFET

Package: Cut Tape

Package: MouseReel

Package: Reel

Height: 1.45 mm

Length: 2.9 mm

Series: SI2

Transistor Type: 1 P-Channel

Width: 1.6 mm

Brand: Vishay / Siliconix

Forward Transconductance - Min: 17 S

Fall Time: 10 ns

Product Type: MOSFET

Rise time: 20 ns

Factory Packing Quantity: 3000

Subcategory: MOSFETs

Typical turn-off delay time: 40 ns

Typical turn-on delay time: 20 ns

Part number alias: SI2305CDS-GE3

Unit weight: 8 mg