IPW65R041CFD

Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-247-3

Number of channels: 1 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 650 V

Id-Continuous Drain Current: 68.5 A

Rds On-Drain Source On Resistance: 37 mOhms

Vgs th-gate-source threshold voltage: 3.5 V

Vgs - Gate-Source Voltage: 20 V

Qg-gate charge: 300 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 500 W

Configuration: Single

Channel Mode: Enhancement

Brand Name: CoolMOS

Package: Tube

Height: 21.1 mm

Length: 16.13 mm

Series: CoolMOS CFD2

Transistor Type: 1 N-Channel

Width: 5.21 mm

Trademark: Infineon Technologies

Fall Time: 8 ns

Product Type: MOSFET

Rise time: 28 ns

Factory Packing Quantity: 240

Subcategory: MOSFETs

Typical turn-off delay time: 127 ns

Typical turn-on delay time: 34 ns

Part number alias: IPW65R041CFDFKSA1 IPW65R41CFDXK SP000756288

Unit weight: 38 g

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