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STP16N65M5 Data Sheet

Manufacturer: STMicroelectronics

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-220-3

Number of channels: 1 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 650 V

Id-Continuous Drain Current: 12 A

Rds On-Drain Source On Resistance: 299 mOhms

Vgs - Gate-Source Voltage: 25 V

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 90 W

Configuration: Single

Channel Mode: Enhancement

Brand Name: MDmesh

Package: Tube

Height: 9.15 mm

Length: 10.4 mm

Series: STP16N65M5

Transistor Type: 1 N-Channel

Width: 4.6 mm

Brand: STMicroelectronics

Fall Time: 7 ns

Product Type: MOSFET

Rise Time: 9 ns

Factory Packing Quantity: 1000

Subcategory: MOSFETs

Typical turn-off delay time: 30 ns

Typical turn-on delay time: 25 ns

Unit weight: 330 mg