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STP13NM50N Data Sheet

Manufacturer: STMicroelectronics

Product Category: MOSFET

RoHS: N

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-220-3

Number of channels: 1 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 500 V

Id-Continuous Drain Current: 12 A

Rds On-Drain Source On Resistance: 320 mOhms

Vgs - Gate-Source Voltage: 25 V

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 100 W

Configuration: Single

Channel Mode: Enhancement

Height: 9.15 mm

Length: 10.4 mm

Series: STB13N

Transistor Type: 1 N-Channel

Width: 4.6 mm

Brand: STMicroelectronics

Fall Time: 10 ns

Product Type: MOSFET

Rise time: 15 ns

Factory Packing Quantity: 1000

Subcategory: MOSFETs

Typical turn-off delay time: 40 ns

Typical turn-on delay time: 30 ns

Unit weight: 330 mg