-
2022-09-24 21:37:18
EPC2111
EPC2111 30VeGaN? Transistor Half Bridge
EPC's EPC2111 Enhancement Mode GaN Power Transistor Half-Bridge Improves Efficiency and Power Density
EPC's EPC2111 30VeGaN™ Transistor Half-Bridge Image EPC's 30V eGaN Half-Bridge The EPC2111 integrates two eGaN power FETs into a single device, increasing efficiency and power density while reducing end-user power conversion system assembly costs. The EPC2111 is available in a chip-scale package that improves switching speed and thermal performance, and is only 3.5 mm x 1.5 mm for increased power density. The main application of the device is laptop and tablet computing. The high frequency capability of GaN reduces the size required for power conversion and therefore will greatly reduce the size of next-generation mobile computing.
feature
high frequency capability
Monolithic integration eliminates interconnect inductance for higher efficiency at higher frequencies
high efficiency
Reduced conduction and switching losses, zero reverse recovery losses
Small footprint
Low inductance, very small, 3.5 mm x 1.55 mm BGA surface mount passivation chip
application
High Frequency DC/DC Power Conversion
Notebook and Tablet Computing