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2022-09-24 21:37:18
IRFR3710ZTRPBF Discrete Semiconductor Products
Model: IRFR3710Z
Brand: Infineon
Package: TO252
parameter:
FET Type: N-Channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss): 100V
Current - Continuous Drain (Id): (at 25°C) 42A (Tc)
Driving voltage (Max Rds On, Min Rds On) 10V
Different Id, Rds On (max) at Vgs 18 milliohms @ 33A, 10V
Vgs(th) (max) at different Ids 4V @ 250μA
Gate charge (Qg) at different Vgs (max) 100nC @ 10V
Vgs (max) ±20V
Input Capacitance (Ciss) at Vds: (Maximum) 2930pF @ 25V
FET function-
Power Dissipation: (Max) 140W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount