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2022-09-24 21:37:18
CSD17313Q2 advantage hot selling original genuine fake one penalty ten
General information
Data Sheet CSD17313Q2;_Power Management Guide;_TI Solutions Tablets, eBooks;_Standard Package 3,000
Packaging standard tape and reel
Part status on sale
Category Discrete Semiconductor Products
Product Family Transistor - FET, MOSFET - Single
Series NexFET??
Specification
FET type N-channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 30V
Current - Continuous Drain (Id) (at 25°C) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
Different Id, Rds On (max) at Vgs 30 milliohms @ 4A, 8V
Vgs(th) (max) at different Ids 1.8V @ 250μA
Gate charge (Qg) at different Vgs (max) 2.7nC @ 4.5V
Vgs (max) +10V, -8V
Input Capacitance (Ciss) at Vds (Maximum) 340pF @ 15V
FET function-
Power Dissipation (Max) 2.3W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Vendor Device Package 6-WSON (2x2)
Package/Case 6-WDFN Exposed Pad
Documentation
Manufacturer Product Page CSD17313Q2 Specifications
Application Note Ringing Reduction Techniques for MOSFETS
PCN Components/Origin CSDYYY 01/Feb/2019
PCN Design/Specification Marking Standardization 29/Jan/2015
images and media
Product Photo 6-WSON
Product Training Module NexFET MOSFET Technology
Featured ProductsCreate your power design now with TI's WEBENCH? Designer
Power Management
Video fileNexFET Power Block
PowerStack® Packaging Technology Overview