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2022-09-24 21:37:18
Original spot IPD90P03P4L-04
Specification
FET type P-channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 30V
Current - Continuous Drain (Id) (at 25°C) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Different Id, Rds On (max) at Vgs 4.1 milliohms @ 90A, 10V
Vgs(th) (max) 2V @ 253μA at different Ids
Gate charge (Qg) at different Vgs (max) 160nC @ 10V
Vgs (max) +5V, -16V
Input Capacitance (Ciss) at Vds (Maximum) 11300pF @ 25V
FET function-
Power Dissipation (Max) 137W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount