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2022-09-24 21:37:18
NTD5865NLT4G company original genuine spot
NTD5865NLT4G Data Sheet
Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: TO-252-4
Number of channels: 1 Channel
Transistor Polarity: N-Channel
Vds-drain-source breakdown voltage: 60 V
Id-Continuous Drain Current: 46 A
Rds On-Drain Source On Resistance: 16 mOhms
Vgs th - gate-source threshold voltage: 1 V
Vgs - Gate-Source Voltage: 10 V
Qg-gate charge: 29 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-Power Dissipation: 71 W
Configuration: Single
Channel Mode: Enhancement
Package: Cut Tape
Package: MouseReel
Package: Reel
Transistor Type: 1 N-Channel
Trademark: ON Semiconductor
Forward Transconductance - Min: 15 S
Fall Time: 4.4 ns
Product Type: MOSFET
Rise Time: 12.4 ns
Factory Packing Quantity: 2500
Subcategory: MOSFETs
Typical turn-off delay time: 26 ns
Typical turn-on delay time: 8.4 ns
Unit weight: 450 mg