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PBSS4350T Data Sheet

Manufacturer: Nexperia

Product Category: Bipolar Transistor - Bipolar Junction Transistor (BJT)

RoHS: Details

Installation style: SMD/SMT

Package/Case: SOT-23-3

Transistor Polarity: NPN

Configuration: Single

Collector-emitter maximum voltage VCEO: 50 V

Collector-Base Voltage VCBO: 50 V

Emitter-Base Voltage VEBO: 5 V

Maximum DC collector current: 5 A

Gain bandwidth product fT: 100 MHz

Minimum operating temperature: - 65 C

Maximum operating temperature: + 150 C

DC current gain hFE max: 300 at 100 mA, 2 V

Height: 1 mm

Length: 3 mm

Package: Cut Tape

Package: MouseReel

Package: Reel

Width: 1.4 mm

Brand: Nexperia

Collector Continuous Current: 2 A

DC Collector/Base Gain hfe Min: 300

Pd-Power Dissipation: 300 mW

Product Type: BJTs - Bipolar Transistors

Qualification: AEC-Q101

Factory Packing Quantity: 3000

Subcategory: Transistors

Part number alias: PBSS4350T T/R

Unit weight: 8 mg