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PBSS4350Z Data Sheet

Manufacturer: Nexperia

Product Category: Bipolar Transistor - Bipolar Junction Transistor (BJT)

RoHS: Details

Installation style: SMD/SMT

Package/Case: SOT-223-3

Transistor Polarity: NPN

Configuration: Single

Collector-emitter maximum voltage VCEO: 50 V

Collector-Base Voltage VCBO: 60 V

Emitter-Base Voltage VEBO: 6 V

Maximum DC collector current: 3 A

Gain bandwidth product fT: 100 MHz

Minimum operating temperature: - 65 C

Maximum operating temperature: + 150 C

DC current gain hFE max: 200 at 500 mA, 2 V

Height: 1.7 mm

Length: 6.7 mm

Package: Cut Tape

Package: MouseReel

Package: Reel

Width: 3.7 mm

Brand: Nexperia

DC Collector/Base Gain hfe Min: 200 at 500 mA, 2 V

Pd-Power Dissipation: 2000 mW

Product Type: BJTs - Bipolar Transistors

Qualification: AEC-Q101

Factory Packing Quantity: 4000

Subcategory: Transistors

Part number alias: /T3 PBSS4350Z

Unit weight: 188 mg