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2022-09-24 21:37:18
Supply: Bipolar Junction Transistor (BJT) 2N4401
Manufacturer: Central Semiconductor
Product Category: Bipolar Transistor - Bipolar Junction Transistor (BJT)
RoHS: Details
Mounting Style: Through Hole
Package/Case: TO-92-3
Transistor Polarity: NPN
Configuration: Single
Collector-emitter maximum voltage VCEO: 40 V
Collector-Base Voltage VCBO: 60 V
Emitter-Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 750 mV
Maximum DC collector current: 600 mA
Gain bandwidth product fT: 250 MHz
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Series: 2N4401
DC current gain hFE max: 20
Height: 5.33 mm
Length: 5.21 mm
Package: Bulk
Width: 4.19 mm
Trademark: Central Semiconductor
Collector Continuous Current: 0.6 A
DC Collector/Base Gain hfe Min: 20 at 500 mA, 2 V
Pd-Power Dissipation: 625 mW
Product Type: BJTs - Bipolar Transistors
Factory Packing Quantity: 2500
Subcategory: Transistors
Part number alias: 2N4401 PBFREE
Unit weight: 450 mg