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2022-09-24 21:37:18
IRFR5410TRPBF original spot
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: TO-252-3
Number of channels: 1 Channel
Transistor Polarity: P-Channel
Vds-drain-source breakdown voltage: 100 V
Id-Continuous Drain Current: 13 A
Rds On-Drain Source On Resistance: 205 mOhms
Vgs th-gate-source threshold voltage: 4 V
Vgs - Gate-Source Voltage: 20 V
Qg-gate charge: 38.7 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-Power Dissipation: 66 W
Configuration: Single
Channel Mode: Enhancement
Package: Cut Tape
Package: MouseReel
Package: Reel
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 P-Channel
Type: HEXFET Power MOSFET
Width: 6.22 mm
Trademark: Infineon Technologies
Forward Transconductance - Min: 3.2 S
Fall Time: 46 ns
Product Type: MOSFET
Rise time: 58 ns
Factory Packing Quantity: 2000
Subcategory: MOSFETs
Typical turn-off delay time: 45 ns
Typical turn-on delay time: 15 ns
Part number alias: SP001557100
Unit weight: 4 g