Semiconductor transistor STF14NM50N STI14NM50N STP14NM50N n-channel 500 V, 0.28Ωtyp. , 12 MDmesh? II Power mosfet - 220 Foreign Policy, I 2PAK - 220 Pack Data Sheet - Production Data

Figure 1. Internal schematic features? 100% avalanche testing? Low input capacitance and gate charge? Low gate input resistance

?Switching Application Description Semiconductor Transistor STF14NM50N

These devices are n-channel power MOSFETs developed using second-generation MDmesh™ technology. This revolutionary power MOSFET combines a vertical structure with the company's strip layout, resulting in one of the lowest on-resistance and gate charges in the world

Absolute Maximum Ratings Symbol Parameter Value Unit I 2PAK - 220 - 220 FP VDS Drain Source Voltage 500 V VGS Gate Source Voltage ±25v ID Leakage Current (Continuous) TC = 25°C 12 12 (1)

1. Limited by the maximum junction temperature semiconductor transistor STF14NM50N

A ID leakage current (continuous) at TC = 100°C 8 8 (1) A IDM (2)

2. The pulse width is limited by the safe operating area Semiconductor transistor STF14NM50N

Leakage current (pulse) 4848 (1)A

Total dissipation at TC = 25°C 90 25 W dv/dt (3)

3.ISD≤12a, di/dt≤400a/s, VDS peak≤V(BR)DSS, VDD = 80%_V(BR)DSS

Peak diode recovery voltage slope is 15v/ns VISO 3 leads to external heat sink Diode Withstand Voltage (RMS) (t = 1 s; TC = 25°C) 2500 V

Storage Temperature - 55 to 150°C Tj Max. Operating junction temperature 150℃ Table 3. Thermal Data Symbol Parameter Value Units - 220 - fp I 2PAK - 220

Symbolic parameter test conditions are minimal. Max. Unit ISD ISDM (1)

1. The pulse width is limited by the safe operating area.

Source-drain current source-drain current (pulse) 12 48 a-one atrial septal defect (2)

2. Pulse, pulse duration = 300μs, duty cycle 1.5%_

Forward Voltage ISD = 12a, VGS = 0 - 1.6 Vtrr Qrr IRRM

reverse recovery time reverse recovery charging reverse recovery current

ISD = 12, di/dt = 100/µs, VDD = 60 V (see Figure 20) 252 2.8 22nsµC a

trr Qrr IRRM reverse recovery time reverse recovery charging reverse recovery current

ISD = 12, di/dt = 100/µs, VDD = 60 V, TJ = 150°C (see Figure 20) 300 3.3 - 22.2nsµC a