Discrete Semiconductor Transistors STP7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z n-channel 800 V, 1.5Ω, 5.2, -220, -220-fp, D2PAK, I2PAK Zener-protected SuperMESH™ Power MOSFET Features

Very high dv/dt capability, 100% avalanche test, very low intrinsic capacitance, excellent manufacturing repeatability Switching application discrete semiconductor transistor STP7NK80Z

The SuperMESH™ series is obtained by extreme optimization of ST's established strip-based PowerMESH™ layout. In addition to significantly reducing on-resistance, special care has been taken to ensure very good dv/dt capability for the most demanding applications. This family of products complements ST's full line of high-voltage mosfets, including the revolutionary MDmesh® product. Figure 1. Internal Schematic Discrete Semiconductor Transistor STP7NK80Z

vds company type (@Tjmax) RDS () ID STP7NK80Z 800 v 5.2 < 1.8? STP7NK80ZFP 800 v 5.2 < 1.8? STB7NK80Z 800 v 5.2 < 1.8? STB7NK80Z-1 800 v 5.2 < 1.8?

I2PAK 220 Foreign Policy D2PAKAM01476v1 Table 1. Equipment summary order code, logo packaging packaging

STB7NK80ZT4 B7NK80Z D2PAK Tape e Reel STB7NK80Z-1 B7NK80Z I 2PAK TubeSTP7NK80Z P7NK80Z - 220 STP7NK80ZFP P7NK80ZFP - 220 Foreign Policy

Symbolic parameter value

VDS drain-source voltage (VGS = 0) 800 V VGS gate-source voltage ±30 V ID drain current (continuous) TC = 25°C 5.2 5.2 (1)

1. Only limited by the maximum temperature allowed discrete semiconductor transistor STP7NK80Z

A ID leakage current (continuous) at TC = 100°C 3.3 3.3 (1) A IDM (2)

2. The pulse width is limited by the safe operating area

Leakage current (pulsed) 20.8 20.8(1) Total dissipation is zero VESD (g) at TC = 25°C 125 30 W 1 0.24 W/°C

Gate to Source ESD (HBM-C = 100 pF, R = 1.5 kΩ) 4000 Vdv / dt (3)

3.ISD≤5.2, di / dt≤200 /μs VDD≤V (BR) DSS, Tj≤TJMAX.

Peak diode recovery voltage slope 4.5 V/ns

Dielectric Withstand Voltage (RMS) VISO 3 Leads to External Heat Sink (t=1 s; TC = 25°C) 2500 VTj Test

Maximum Operating Junction Temperature Storage Temperature Discrete Semiconductor Transistor STP7NK80Z

-55 to 150 years thermal data symbol parameter rthj - case thermal resistance connection - case max 14.2°C/W Rthj - amb thermal resistance connection - ambient max 62.5°C/W

The maximum lead temperature for Tl soldering is 300°C Table 4. Avalanche Characteristic Symbol Parameter Value Unit AR Avalanche current, repetitive or non-repetitive (pulse width limited by Tj Max) 5.2

EAS Single Pulse Avalanche Energy (Starting TJ = 25°C, ID = IAR, VDD = 50 V)