Transistor STC6NF30V n-channel 30v 2.5-0.020?- 6a TSSOP8 v-drive STripFET?II Power MOSFET 60V

General Features Ultra-low threshold gate drive (2.5V) Standard shape for easy automatic surface mount installation

Transistor STC6NF30V This power MOSFET is a unique "single feature size?" strip process newly developed by STMicroelectronics. The resulting transistors exhibit extremely high packing density at low on-resistance.

VDS Drain-Source Voltage (vg = 0) 30 V VDGR Drain-gate Voltage (Vg = 20 kΩ) 20 V vg Gate-source ± Voltage 12 V ID Drain Current (Continuous) TC 6 = 25°C ID Drain Current (Continuous) TC IDM 3.8 = 100°C (1)

Transistor STC6NF30V 1. Pulse width limited by safe operating area

Leakage current (pulse) 24 A total loss at TC = 25°C 1.5 W Tstg storage temperature -55 ~ 150°C TJ Max. Operating Junction Temperature -55 to 150°C

Table 2. Thermal Resistance Interface - pbc Max 100 (1)

1. When mounted on FR-4 board with 1 inch ch2 pad, 2 oz copper. t = 10 seconds. Thermal Resistance Connector - pbc Max 83.5 (2)

2. When installed on the recommended minimum footprint

V(BR)DSS Drain-Source Breakdown Voltage

Difficulty zero gate voltage leakage current in ID = 250μa vg 30 V = 0 (VGS = 0)

VDS = Maximum Ratings, VDS = Maximum Ratings @ 125°C 1 10

μAμAigs gate leakage current (VDS = 0) VGS =±12V±100na

VDS vg (th) gate threshold voltage = vg, ID = 250µa 0.6 V RDS() static drain-source resistance vg = 4.5 V, ID = 3 vg = 2.5 V, ID = 3 0.020 0.025 0.025 0.030 ?? Dynamic sign parameter test Conditions are minimal. Max. Unit gfs (1)

Transistor STC6NF30V1. Pulse, pulse duration = 300μs, duty cycle 1.5%_

Forward Transconductance VDS = 10V, ID = 6a18 S CIS Output Capacitor crs

ISD source-drain current 6a ISDM(1)

1. The pulse width is limited by the safe operating area

Source-Drain Current (Pulse) 24a ASD(2) 2. Pulse, Pulse Duration = 300μs, Duty Cycle 1.5% Forward Voltage ISD = 6A, VGS = 0 1.2 V

trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6, di/dt = 100/µs, VDD = 15 v, TJ = 150°C