Supply gate driver ...

  • 2022-09-24 21:48:02

Supply gate driver VN5160STR-E

Features ■ Main - Inrush current active management Power limitation Low standby current - 3.0 v CMOS compatible input - Optimized for electromagnetic emissions Low electromagnetic sensitivity - Compliant with EU Directive 2002/95/EC Status Open Load Detection - Disconnected Open Load Detection Thermal Shutdown Indication ■ - Closed Undervoltage Overvoltage Protection Clip - Output Stick Vcc Detection Load Current Limit. Self-limiting of fast thermal transients. Protection against ground loss and VCC thermal shutdown loss

■ Description of all types of resistive, inductive and capacitive loads VN5160S-E is a monolithic device manufactured using STMicroelectronics VIPower M0-5 technology. Its purpose is to drive resistive or inductive loads with one side grounded. Active VCC voltage clamp protects the device from low energy spikes. When STAT_DIS is on or driven low, the device detects load conditions in both on and off states. An output shorted to VCC is detected in the off state. When STAT_DIS is driven high, the state is in a high impedance state. Output current limit protection device in overload condition. In the event of prolonged overload, the device limits the dissipated power to a safe level until thermal shutdown intervenes. The automatic restart thermal shutdown function enables the device to resume normal operation immediately after the fault state disappears. Solution 1: Ground wire resistance (RGND only), can be used for any load type. Below is a note on the size of the RGND resistor. 1. RGND 600mV / (IS(on)max) 2. RGND VCC) / (-IGND), where -IGND is the DC reverse ground pin current, which can be found in the Absolute Maximum Ratings section of the device datasheet. The power dissipation in RGND (when VCC<0: in reverse battery case) is: PD= (-VCC)2/RGND, this resistor can be shared among several different hsds. Note that the value of this resistor should be calculated according to equation (1), where (on)max is the sum of the maximum on-state currents of the different devices. Note that if the microprocessor ground is not shared by the device ground, then RGND will have a shift (is (on)max *_RGND) in the input threshold and the state output value. This change will depend on how many devices are in the case where several high-side drivers share the same RGND. If the calculated power dissipation results in a large resistor or multiple devices must share a resistor, ST recommends solution 2 (see below)