TC = 70°C 5.5 TA = 25°C 5.3a, b TA = 70°C 4.4a, b Pulse leakage current IDM 30

Continuous Source Drain Diode Current TC = 25°C is 3.1 TA = 25°C 2a, b Avalanche Current L = 0 1 mHas12 Single Pulse Avalanche Energy EAS 7.2 mJ

Maximum power dissipation TC = 25°CPd3.7WTC = 70°C 2.6 TA = 25°C 2.4a, b TA = 70°C 1.7a, b Operating junction and storage temperature range TJ, Tstg - 55 ~ 175°C

Thermal Resistance Rating Parameter Symbol Typical Max Unit Max Connected to Mid, ct≤10 s RthJA 50 62.5°C/W Max Connected to Pin (Drain) Steady State RthJF 33 41 Document Number: 73411 S09-2434-Rev. C. 16-Nov-09

Vishay Siliconix Si4946BEY

Note: a. Pulse test; pulse width≤300μs, duty cycle≤2%. b. Guaranteed by design, not production tested.

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and the functional operation of the device under these or any other conditions is not covered by those indicated in the operating section of the specification. Prolonged exposure to absolute maximum rating conditions may affect device reliability.

Specifications TJ = 25°C unless otherwise noted. Max. Cell Static Drain-Source Breakdown Voltage VDS vg = 0 V, ID = 250 μA 60 V VDS Temperature Coefficient ΔVDS / TJ ID = 250 μA 53 mV /°C vg (th) Temperature Coefficient ΔVGS (th) / TJ - 6.7 Gate-Source Threshold Voltage vg VDS (th) = vg ID = 250µA 1.0 2.4 3.0 V Gate-Source Leakage igs VDS = 0 V, vg = ±20 V ±100 nA

Zero gate voltage leakage current IDSS

VDS = 60v, VGS = 0 v1 Drain-Source On-State Resistance RDS(on)VGS = 10v, ID = 5.3 A 0.033 0.041Ω

vg = 4.5 V, ID = 4.7 0.041 0.052 Forward Transconductancea gfs VDS = 15 V, 5.3 ID = 24 S Dynamicb Input Capacitor cis VDS = 30 V, vg = 0 V, f = 840 MHz pFOutput Reverse Transfer Capacitor Output Capacitor 71 crs 44 total gate charge Qg

VDS = 30v, VGS = 10v, ID = 5.3 A 17 25 NC VDS = 30v, VGS = 5v, ID = 5.3 A

9.2 12 Gate-Source Charge in 3.3 Gate-Drain Qgd Charge 3.7 Gate Resistance Rg f = 1 MHz 3.1 6.5 9.5Ω Turn-On Delay Time td(up) VDD = 30 V, RL = 6.8Ω ID 4.4? VGEN = 4.5 V, Rg = 1Ω20 30

ns rise time tr 120 180 off delay td (off) 20 30 fall time tf 30 45 on delay time