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2022-09-23 17:22:28
IRF640NPBF original authentic
product properties
type
describe
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category
Discrete Semiconductor Products
Transistor - FET, MOSFET - Single
manufacturer
Infineon Technologies
series
HEXFET?
Package
pipe fittings
product status
in stock
FET type
N channel
technology
MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)
200V
Current at 25°C - Continuous Drain (Id)
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
On-resistance (max) at different Id, Vgs
150 milliohms @ 11A, 10V
Vgs(th) (maximum) at different Ids
4V @ 250μA
Gate charge (Qg) at different Vgs (max)
67nC @ 10V
Vgs (max)
±20V
Input capacitance (Ciss) at different Vds (max)
1160 pF @ 25V
FET function
-
Power dissipation (max)
150W (Tc)
Operating temperature
-55°C ~ 175°C (TJ)
installation type
through hole
Supplier Device Packaging
TO-220AB
Package/Enclosure
TO-220-3
Basic product number
IRF640