BSP149H6327XTS...

  • 2022-09-23 17:22:28

BSP149H6327XTSA1 new original genuine spot

BSP149H6327XTSA1

category

Discrete Semiconductor Products

Transistor - FET, MOSFET - Single

manufacturer

Infineon Technologies

series

SIPMOS

Package

Tape and Reel (TR)

Shear Band (CT)

Digi-Reel Custom Reel

product status

in stock

FET type

N channel

technology

MOSFET (Metal Oxide)

Drain-Source Voltage (Vdss)

200V

Current at 25°C - Continuous Drain (Id)

660mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

On-resistance (max) at different Id, Vgs

1.8 ohms @ 660mA, 10V

Vgs(th) (maximum) at different Ids

1V @ 400μA

Gate charge (Qg) at different Vgs (max)

14nC @ 5V

Vgs (max)

±20V

Input capacitance (Ciss) at different Vds (max)

430 pF @ 25V

FET function

depletion mode

Power dissipation (max)

1.8W (Ta)

Operating temperature

-55°C ~ 150°C (TJ)

installation type

Surface Mount Type

Supplier Device Packaging

PG-SOT223-4

Package/Enclosure

TO-261-4, TO-261AA

Basic product number

BSP149

MB90F543GSPFR-GE1

R5F70855AD80FPV

B59052D1090A040