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2022-09-23 17:22:28
AUIRFS4127
ManufacturerInfineon Technologies
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 200 V
Current at 25°C - Continuous Drain (Id) 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
On-resistance (max) at different Id, Vgs 22 milliohms @ 44A, 10V
Vgs(th) (max) at different Id 5V @ 250μA
Gate charge at different Vgs? (Qg) (max) 150 nC @ 10 V
Vgs (max) ±20V
Input Capacitance (Ciss) (Max) at Vds 5380 pF @ 50 V
FET function-
Power Dissipation (Max) 375W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Type
Device package PG-TO263-3