Device Description

Memory Interface Type: I2C Memory Capacity: 128Kb (16K x 8) Operating Voltage: 2.5V ~ 5.5V Memory Type: Non-Volatile 128K I2C CMOS Serial EEPROM

parameter

parameter name property value

Whether lead-free or lead-free

Whether Rohs certification meets

Parts Packaging Code SOIC

Packaging InstructionsROHS COMPLIANT, PLASTIC, SOIC-8

8 needles

Reach Compliance Codecompliant

ECCN code EAR99

Factory Lead Time8 weeks 6 days

Other features 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

Maximum clock frequency (fCLK) 0.4 MHz

Data retention time - minimum 200

Endurance 1000000 Write/Erase Cycles

I2C control byte 1010DDDR

JESD-30 Code R-PDSO-G8

JESD-609 code e3

Length 4.9 mm

Memory density 131072 bit

Memory IC Type EEPROM

memory width 8

Moisture Sensitivity Level 1

Number of functions 1

Number of terminals 8

Word count 16384 words

Word count code 16000

Working modeSYNCHRONOUS

Maximum operating temperature 85 °C

Minimum operating temperature -40 °C

Organizing 16KX8

Package body material PLASTIC/EPOXY

Package code SOP

Package Equivalent Code SOP8,.25

Package shape RECTANGULAR

Package SMALL OUTLINE

Parallel/Serial SERIAL

Peak Reflow Temperature (Celsius) 260

Power supply 3/5 V

Certification StatusNot Qualified

Maximum seat height 1.75 mm

Serial bus type I2C

Maximum standby current 0.000001 A

Maximum slew rate 0.003 mA

Maximum supply voltage (Vsup) 5.5 V

Minimum supply voltage (Vsup) 2.5 V

Nominal supply voltage (Vsup) 4.5 V

Surface MountYES

Technology CMOS

Temperature class INDUSTRIAL

Terminal Surface Matte Tin (Sn)

Terminal form GULL WING

Terminal pitch 1.27 mm

Terminal position DUAL

Maximum time at peak reflow temperature 40

Width 3.9 mm

Maximum write cycle time (tWC) 5 ms

Write-protect HARDWARE

Base Number Matches1