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2022-09-23 17:22:28
Specifications of IPD80R3K3P7ATMA1 product information
parameter
parameter name property value
FET type N-channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 800V
Current - Continuous Drain (Id) (at 25°C) 1.9A (Tc)
Driving voltage (Max Rds On, Min Rds On) 10V
Different Id, Rds On (max) at Vgs 3.3 ohms @ 590mA, 10V
Vgs(th) (max) at different Ids 3.5V @ 30μA
Gate charge (Qg) at different Vgs (max) 5.8nC @ 10V
Vgs (max) ±20V
Input Capacitance (Ciss) at Vds (Maximum) 120pF @ 500V
FET function-
Power Dissipation (Max) 18W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package/Case TO-252-3, DPak (2 leads + tab), SC-63