IPD50N04S3-08

Manufacturer: Infineon

Product Category:MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case:TO-252-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 40 V

Id-Continuous Drain Current: 50 A

Rds On-Drain Source On Resistance: 8 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 4 V

Qg-gate charge: 27 nC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 175 C

Pd - Power Dissipation: 68 W

Channel Mode:Enhancement

Qualification: AEC-Q101

Brand Name: OptiMOS

Package:Reel

Package:Cut Tape

Package: MouseReel

Trademark: Infineon Technologies

Configuration:Single

Fall Time: 6 ns

Height: 2.3 mm

Length: 6.5 mm

Product Type:MOSFET

Rise time: 7 ns

Series: OptiMOS-T

2500

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 16 ns

Typical turn-on delay time: 11 ns

Width: 6.22 mm

Part Number Alias: IPD5N4S38XT SP000261218 IPD50N04S308ATMA1

Unit weight: 330 mg

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