NTR4502PT1G ON 20 V 80 mOhm 1.25W MOSFET-SOT-23 advantage original spot

RohsLead free / RoHS Compliant

Product Change Notice Wire Change for SOT23 Pkg 26/May/2009

Standard package 3,000

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 20V

Current - Continuous Drain (Number) @ 25°C 3.2A

Rds (max) @ ID, VGS80 mOhm @ 3.6A, 4.5V

VGS (TH) (max) @ Id1.2V @ 250µA

Gate Charge (Qg) @ VGS6nC @ 4.5V

Input Capacitor (Ciss) @ 200pF of Vds @ 10V

Power - 1.25W max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

Channel Mode Enhancement

Maximum drain-source voltage 20 V

Maximum continuous drain current 3.2 A

RDS - at 80@4.5V mOhm

Maximum gate-source voltage ±12 V

Typical turn-on delay time 6.5 ns

Typical turn-off delay time 12 ns

Typical fall time 3 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±12

EU RoHS Directive Compliant

Maximum working temperature 150

Standard package name SOT-23

Minimum operating temperature -55

Channel TypeN

Package Tape and_Reel

Maximum drain-source resistance 80@4.5V

Maximum drain-source voltage 20

Number of components per chip 1

Supplier Package SOT-23

Maximum power dissipation 1250

Maximum continuous drain current 3.2

Number of pins 3

Lead Shape Gull-wing

FET Features Logic Level Gate, 2.5V Drive

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 3.2A (Ta)

Vgs(th) (max) @Id1.2V @250µA

Supplier Equipment Package SOT-23-3 (TO-236)

Other namesNTR4501NT1GOSTR

On Rds (max) @ Id, V GS80 mOhm @ 3.6A, 4.5V

FET Type MOSFET N-Channel, Metal Oxide

Power - 1.25W max

Drain to source voltage (Vdss) 20V

Input Capacitance (Ciss) @ VDS200pF @ 10V

Gate Charge (Qg) @ VGS6nC @ 4.5V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

CategoryPower MOSFET

Configure Single

Dimensions 2.9 x 1.3 x 0.94mm

Height 0.94mm

Length 2.9mm

Maximum drain-source resistance 0.08 Ω

Maximum operating temperature +150 °C

Maximum power dissipation 1.25 W

Minimum operating temperature -55 °C

Packaging Type SOT-23

Typical Gate Charge @ VGS2.4 nC V @ 4.5

Typical Input Capacitance @ VDS200 pF V @ 10

Width 1.3mm

Drain current (max) 3.2 A

Frequency (Max) Not Required MHz

Gate-source voltage (max) ~12 V

Output power (max) Not Required W

Power dissipation 1.25 W

Noise Figure Not Required dB

Drain-source on-resistance 0.08 ohm

Operating temperature range -55C to 150C

Polarity N

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain efficiency Not Required %_Drain-source turn-on voltage 20 V

Power Gain Not Required dB

Arc hardeningNo

Continuous drain current 3.2 A

Transistor Polarity: N Channel

Continuous Drain Current Id: 3.2A

Drain Source Voltage Vds: 20V

On Resistance Rds(on): 80mohm

Rds(on) Test Voltage Vgs:4.5V

Threshold Voltage Vgs: 1.2V

Power consumption: 1.25W

Operating Temperature Min:-55°C

Operating Temperature Max: 150°C

Transistor Case Style: SOT-23

No. of Pins: 3

MSL:MSL 1 - Unlimited

SVHC: No SVHC (20-Jun-2013)

Current Id Max: 3.2A

Operating temperature range: -55°C to +150°C

Termination Type: SMD

Voltage Vds Type: 20V

Voltage Vgs Max: 1.2V

Voltage Vgs Rds on Measurement: 4.5V

Weight (kg)0.000008

Xinrui Electronics (Hong Kong) Co., Ltd., a professional component distributor (authorized and non-authorized brands) for 18 years, one-stop terminal manufacturer supporting: (quality assurance and integrity management) is the company's commitment to provide customers with brand original semiconductors, electronic products Component terminal supporting market, focusing on ESD/TVS electrostatic protection diodes, LDO low-power voltage regulators, MOS tubes, battery charging and management power supplies, LEDs, optocouplers, resistors and capacitors, PCB solutions (wireless Bluetooth solutions, One-stop Bluetooth sports solution, speaker, wireless power bank).

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Contact: Miss Yao

Mobile: 13725590222

Tel: 0755-83780666/83265111

Fax: 0755-82800889

QQ: 3373563833

Address: 26B, Block B, Huaqiang Plaza, Futian North Road, Futian District, Shenzhen

Company website: www.xrdz-hk.com

Part of the company's stock:

TLV70433DBVR、TP4101、TP5100、TP4056、RT9013-33PB、TPS73618DBVR、MIC5255-3.0YM5、CDSOT23-T36C、CDSOT23-24C、TL431CDBZR、TL431IDBZR、TLV1117CDCYR、LM317EMPX、NCP1117ST33T3G、NCP1117ST50T3G、PESD5V0V1BL、PESD5V0V1BSF、PESD2CAN、PESD5V0S1BA、PESD12VS2UT、PESD15VL2BT , PESD36VS2UT, PESD3V3L1BA, PESD24VL2BT, IP4220CZ6, IP4223CZ6, BCP56-16, BCP51-16, BSN20, uClamp0511T.TCT, SRV05-4.TCT, RCLAMP0531T.TCT, RCLAMP0502A.TCT, SD05C.TCT, SRAMP05.TCT 、ESD5Z2.5T1G、ESD5Z3.3T1G、CM1213A-01SO、CM1213A-04SO、NTR4501NT1G、NTR4502PT1G、NTR4170NT1G、NTR4171PT1G、RLST23A032C、RLST23A0122C、RLST23A052C、PRTR5V0U2X、GBLC03CI-LF-T7、GBLC03C-LF-T7、GBLC05CI-LF-T7 , GBLC05C-LF-T7, GBLC08CI-LF-T7, GBLC08C-LF-T7, GBLC12CI-LF-T7, GBLC12C-LF-T7, GBLC15CI-LF-T7, GBLC24CI-LF-T7, GBLC24C-LF-T7, PSD03C -LF-T7, PSD05-LF-T7, PSD05C-LF-T7, PSD08C-LF-T7, PSM712-LF-T7, AO3400, AO3400A, AO3401A, AO3402, TPSMB6.8CA-E3/52, TPSMB6.8A, TPSMB47A , TPSMB43A, TPSMB39A, TPSMB36A, TPSMB33A, TPSMB30A, STTH208, , IRLML2502TRPBF, TP4101, IRLML6401TRPBF, TLV70433DBVR, PESD5V0S1BB, PSM712-LF-T7, NTR4171PT1G, SGM2 036-3.3YUDH4G/TR, SGM2036-1.8YUDH4G/TR, DMN2046U-7, etc.

For more models, please inquire:

Xinrui Electronics (Hong Kong) is a professional supplier of integrated circuits and has many years of sales experience in our bank! With a large stock of stock, integrity-based, customer first, the quality of products for customers!

Due to the large number of company models, it is impossible to upload them one by one. If you can't find the product you want on the website, please contact the salesperson. Our company can provide electronic components distribution service.

Company: Xinrui Electronics (Hong Kong) Co., Ltd.

Contact: Miss Yao

Mobile: 13725590222

Tel: 0755-83780666/83265111

Fax: 0755-82800889

QQ: 3373563833

Address: 26B, Block B, Huaqiang Plaza, Futian North Road, Futian District, Shenzhen

Company website: www.xrdz-hk.com

NTR4502PT1G NTR4502PT1G NTR4502PT1G NTR4502PT1G NTR4502PT1G

NTR4502PT1G NTR4502PT1G NTR4502PT1G NTR4502PT1G NTR4502PT1GNTR4502PT1G NTR4502PT1G NTR4502PT1G NTR4502PT1G NTR4502PT1G

According to the Nikkei Asian Review, the source said that Changxin has not been able to completely eliminate the threat, and its production will still use U.S. semiconductor equipment (such as Applied Materials, Lam Research and KLA-Tencor) and EDA tools (such as Cadence) and Synopsys), but the redesign would reduce the threat and avoid touching U.S. intellectual property.

Changxin Storage Chairman and CEO Zhu Yiming also traveled to Europe last October to discuss cooperation with ASML, Europe's largest semiconductor equipment supplier, and visited IMEC in Belgium, a pioneering research institution focusing on nanoelectronics and digital technology . It can be seen that Changxin is seeking support from suppliers outside the United States.

It is understood that Changxin has invested 8 billion US dollars to build a wafer fab in Hefei, which is expected to be put into operation before the end of this year. Changxin will initially produce about 10,000 wafers per month, and while there will be some kind of learning curve, Changxin plans to have some output by the end of the year, one of the sources noted.

However, according to Changxin's 5-year plan for the DRAM project disclosed last year, the company plans to mass-produce 8Gb DDR4 engineering samples by the end of 2018; mass-produce 8Gb LPDDR4 in the third quarter of 2019; achieve a production capacity of 20,000 pieces/month by the end of 2019; Factory construction; 17-nanometer technology research and development will be completed in 2021.