STP20N95K5

Model: STP20N95K5

Brand: ST

Parameter Description:

FET type N-channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 950V

Current - Continuous Drain (Id) (at 25°C) 17.5A (Tc)

Driving voltage (Max Rds On, Min Rds On) 10V

Different Id, Rds On (max) at Vgs 330 milliohms @ 9A, 10V

Vgs(th) (max) at different Ids 5V @ 100μA

Gate charge (Qg) at different Vgs (max) 40nC @ 10V

Vgs (max) ±30V

Input Capacitance (Ciss) at Vds (Maximum) 1500pF @ 100V

FET function-

Power Dissipation (Max) 250W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Supplier Device Package TO-220-3

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