STW20NM60FD

Model: STW20NM60FD

Brand: ST

Parameter Description:

FET type N-channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 600V

Current - Continuous Drain (Id) (at 25°C) 20A (Tc)

Driving voltage (Max Rds On, Min Rds On) 10V

Rds On (max) at different Id, Vgs 290 milliohms @ 10A, 10V

Vgs(th) (max) at different Ids 5V @ 250μA

Gate charge (Qg) at different Vgs (max) 37nC @ 10V

Vgs (max) ±30V

Input Capacitance (Ciss) at Vds (Maximum) 1300pF @ 25V

FET function-

Power Dissipation (Max) 214W (Tc)

Operating temperature -65°C ~ 150°C (TJ)

Mounting Type Through Hole

Supplier Device Package TO-247-3

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