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2022-09-24 22:06:10
IPD30N08S2-22 Tianxin Technology Advantage Channel Accumulation - Stable Supply - Price Advantage
Part status on sale
Category Discrete Semiconductor Products
Product Family Transistor - FET, MOSFET - Single
Series OptiMOS??
Specification
FET type N-channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 75V
Current - Continuous Drain (Id) (at 25°C) 30A (Tc)
Driving voltage (Max Rds On, Min Rds On) 10V
Different Id, Rds On (max) at Vgs 21.5 milliohms @ 50A, 10V
Vgs(th) (max) at different Ids 4V @ 80μA
Gate charge (Qg) at different Vgs (max) 57nC @ 10V
Vgs (max) ±20V
Input Capacitance (Ciss) at Vds (Maximum) 1400pF @ 25V
FET function-
Power Dissipation (Max) 136W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Shenzhen Tianxin Semiconductor Technology Co., Ltd. 0755-82725660 18128853661 (WeChat 75056055) QQ: 177691499