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2022-09-23 17:22:28
IRFP4668PBF brand new original spot
Installation style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - C continuous drain current: 130 A
Rds On - Drain-Source Resistance: 9.7 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - gate-source threshold voltage: 1.8 V
Qg - Gate Charge: 161 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 175 C
Pd - Power consumption: 520 W
Channel Mode:Enhancement
Package:Tube
Brand: Infineon / IR
Configuration:Single
Fall Time: 74 ns
Mutual Conductance - Min: 150 S
Height: 20.7 mm
Length: 15.87 mm
Product Type:MOSFET
Rise time: 105 ns
400
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Standard off-delay time: 64 ns
Standard turn-on delay time: 41 ns
Width: 5.31 mm
Part number alias: IRFP4668PBF SP001572854
Weight per piece: 6 g