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2022-09-23 17:22:28
STW20NB50
ManufacturerSTMicroelectronics
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
On-resistance (max) at different Id, Vgs 250mΩ @ 10A, 10V
Vgs(th) (max) at different Id 5V @ 250μA
Gate charge at different Vgs? (Qg) (max) 110 nC @ 10 V
Vgs (max) ±30V
Input Capacitance (Ciss) (Max) at Vds 4700 pF @ 25 V
FET function-
Power Dissipation (Maximum) 250W (Tc)
Operating temperature 150°C (TJ)
Mounting Type Through Hole
Device Package TO-247-3
Package/Case TO-247-3