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2022-09-16 16:00:09
L9380 triple high side MOSFET driver
Overvoltage charging pump closure
For VVS GT; 25V
Battery reverse protection (reference application circuit diagram)
Passage 1 and 2 can be programmable overload protection function [ 123]
Opening the ground ground protection functionChannel 1 and channel 2
Constant grid power supply
Instructions
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L9380
The device is the n -channel power MOS transistor switch in the three external controller high -end . It is used for replacement of the automotive electrical relay of the automotive electrical control unit.[
[ [ 123]
Note: Except for the timer pins, the ESD of all pins is in line with MIL 883C, testing at 2KV, corresponding to the maximum energy consumption of 0.2mj. The timer pins are tested by 800V [123 ]
Electric characteristics (7V ≤VS ≤18.5V; -40 ° C ≤TJ≤150 ° C, unless there are other regulations.)
Note: Design is not Ensuring the measurement function means that the power supply voltage is reduced to 5.5V. The function means that the channel may exceed the restrictions from the input. In this case, the programming voltage and the timer threshold will be lower. This will reduce the protection threshold and and Protection time.
The characteristics of the triple high -voltage side power MOS driver
All the necessary control and protection functions open three power MOS transistors as high -voltage side switch control units for automotive electrons. Reconstruction of the relay in the high current load system. Usually the rated current of the motor is about 40A grounded, and the high signal at the pin of the pins can enable these three functions to enable the channel at the same time. When enabled, the low door is restrained to the door to be restrained to reaches to the door. Ground. In this case, the grille pole current is 3mA higher than the specified. To enable low signals will also reset the timer. Low signal outside the door input and switch on the door. . In this case, the device can be disabled to use the enable pin. The load of the fuel pump is affected by the input of input. An external N -channel MOS driver configuration requires a higher grille driver voltage. Charging capacitor pump and an external charge storage capacitor CCP. The size of the charge pump should be able to load CA
In the case of less than 20ms to 8V, the capacitor CCP is 33NF or above VS VS The value of .ccp depends on the capacitance of the input MOS and the decaying charge pump voltage to the value of that value on that value. The necessary charging time of the CCP must be arranged in the order of the input control signal. Therefore, the lower door arrives The source voltage will cause MOS to enter the overload state. In this case, overload protection timer willstart up. After the protection time, the relevant channel will be closed. No passage 3 with overload protection. The same situation may be discharged by storage capacitors due to the short -circuit of the gate on the ground. The door drive provided by the pin CP is the output of the charge pump, with a receiver and the source current capacity of 3mA. There is no restriction on the source of short -circuit loading (source to the ground) L9380. The protection of the door source must be carried out.
Channel 1 and Channel 2 provides a delay in the induction of the programm can be closed when the programmable closure is more than the activation threshold. This threshold VDSmin is set by an external resistor RD. The flowing current flowing is determined by the programming resistor RPR. The external resistor RPR also defines the charger of the timer capacitor CCT. The delay time TOFF can be calculated by the delay time of the leakage threshold VDSMIN timer:
In the application that does not use overload protection, or if there is no channel, the timer pins must put the band resistor of the channel with resistance. Fully led to VBAT. The timing characteristics illustrate the meaning of this function and the meaning of VDSMIN and TOFF (see Figure 4). The input current of the overload detection comparator is specified as ISMAX. The sum of the IPR+IDMAX generator generates voltage drops on the external resistance RD. At the switching point, the comparator input source pinth current is equal to the specified current ISMAX. For offset compensation, the external resistance (RD RS) source PIN at the leak is necessary. The comparator of the leak detection overload has a 20mv symmetrical stagnation (see Figure 6). Under the drain voltage, the source pins voltage is increased by 10mV to force the timer capacitor to discharge. The reduction source pins voltage than the leakage foot voltage 10mV detects the external MOS overload, and the timer capacitor will be loaded. The voltage at the time to reach the pin CT is higher than the affected channel of the chronograph threshold VTHI. If this is overloaded in the timer capacitor.
The timer capacitor will use the high signal of the input terminal (see Figure 4). After reaching a lower timer threshold, overload protection reset, the channel can be connected again. The application diagram is shown in Figure 7. It is the reason for the reasons of the electric power line to run and the system requires external resistors. At the positive ISO pulse at the leak, the grid source uses an active clamping structure to clamp. This clamp voltage is less than 60V. The negative pulses are clamped with only -15V with a static discharge structure. The transient below -15V will affect other channels. In order to prevent the crystalline tube from overloading and grille pole breakdown and protecting the diode, the source of the diode, and the source of the pouring and drainage port must be connected. Enter VS (VS GT; 20V) charge pump to stop. Then the charge pumping container will be connected by a diode and a resistor to VS (see the square diagram). In this case, the channel is not an impact. When the battery is in reverse state, the needle foot D1, D2, S1, S2 follow the battery potential to fall to -13V (high impedance) and grid drive pins G1, G2 finger S1, S2, S2, S2Essence This can ensure that M1 and M2 will not enter the linear conductive mode. This protection function is working for VS1, VS2, and the voltage drops to -15V. In this case, the drive output G3 is related to D1. This function ensures that the MOS transistor M3M4 is closed by the MOS transistor of the N -channel MOS. The input and output of all power supply and PC board are equipped with a flat cable of 40 lines (not used by the wires that have been used). This telegram has submitted RF connection 40839-4 or ISO 11456-5 in the band line described in DIN. The measured circuit is based on wooden boards with ground floor on the printing circuit board. In the frequency range, 1kHz is modulated from 1MHz to 400MHz and 80%AM, and the field strength is 200V/m. It has no effect to detect basic functions on a typical device. The failure standard is the package of the output signal, with an amplitude of 20%and the input of 2%.
Suggestions of the corresponding circuit: timer and charging capacitors are equipped with an AC current source. We must avoid short -connecting electromagnetic immigrants from the short -connected capacitors. The size of the resistance RD, RG, and RS must meet the maximum current during each pins.
Typical features
According to the scope of production, certain deviations may occur. Limit (see. (4)