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IRL3102PBF Data Sheet

Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-220-3

Number of channels: 1 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 20 V

Id-Continuous Drain Current: 61 A

Rds On-Drain Source On Resistance: 15 mOhms

Vgs - Gate-Source Voltage: 10 V

Qg-gate charge: 38.7 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 89 W

Configuration: Single

Channel Mode: Enhancement

Package: Tube

Height: 15.65 mm

Length: 10 mm

Transistor Type: 1 N-Channel

Type: HEXFET Power MOSFET

Width: 4.4 mm

Trademark: Infineon / IR

Fall Time: 110 ns

Product Type: MOSFET

Rise Time: 130 ns

Factory Packing Quantity: 3000

Subcategory: MOSFETs

Typical turn-off delay time: 80 ns

Typical turn-on delay time: 10 ns

Part number alias: SP001576478

Unit weight: 6 g