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IRFP260MPBF Data Sheet

Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-247-3

Number of channels: 1 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 200 V

Id-Continuous Drain Current: 50 A

Rds On-Drain Source On Resistance: 40 mOhms

Vgs th-gate-source threshold voltage: 4 V

Vgs - Gate-Source Voltage: 20 V

Qg-gate charge: 156 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-Power Dissipation: 300 W

Configuration: Single

Channel Mode: Enhancement

Package: Tube

Height: 20.7 mm

Length: 15.87 mm

Transistor Type: 1 N-Channel

Width: 5.31 mm

Trademark: Infineon Technologies

Forward Transconductance - Min: 27 S

Fall Time: 48 ns

Product Type: MOSFET

Rise time: 60 ns

Factory Packing Quantity: 400

Subcategory: MOSFETs

Typical turn-off delay time: 55 ns

Typical turn-on delay time: 17 ns

Part number alias: SP001572874

Unit weight: 38 g