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IPD60R950C6 Data Sheet

Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: TO-252-3

Number of channels: 1 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 600 V

Id-Continuous Drain Current: 4.4 A

Rds On-drain-source on-resistance: 860 mOhms

Vgs th-gate-source threshold voltage: 2.5 V

Vgs - Gate-Source Voltage: 20 V

Qg-gate charge: 13 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 37 W

Configuration: Single

Channel Mode: Enhancement

Brand Name: CoolMOS

Package: Cut Tape

Package: MouseReel

Package: Reel

Height: 2.3 mm

Length: 6.5 mm

Series: CoolMOS C6

Transistor Type: 1 N-Channel

Width: 6.22 mm

Trademark: Infineon Technologies

Fall Time: 13 ns

Product Type: MOSFET

Rise Time: 8 ns

Factory Packing Quantity: 2500

Subcategory: MOSFETs

Typical turn-off delay time: 60 ns

Typical turn-on delay time: 10 ns

Part number alias: IPD60R950C6BTMA1 SP000629368

Unit weight: 4 g