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IRF7316TRPBF Data Sheet

Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: SO-8

Number of channels: 2 Channel

Transistor Polarity: P-Channel

Vds-drain-source breakdown voltage: 30 V

Id-Continuous Drain Current: 4.9 A

Rds On-Drain Source On Resistance: 76 mOhms

Vgs th - gate-source threshold voltage: 1 V

Vgs - Gate-Source Voltage: 20 V

Qg-gate charge: 23 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 2 W

Configuration: Dual

Channel Mode: Enhancement

Package: Cut Tape

Package: MouseReel

Package: Reel

Height: 1.75 mm

Length: 4.9 mm

Transistor Type: 2 P-Channel

Width: 3.9 mm

Trademark: Infineon / IR

Forward Transconductance - Min: 7.7 S

Fall Time: 32 ns

Product Type: MOSFET

Rise time: 13 ns

Factory Packing Quantity: 4000

Subcategory: MOSFETs

Typical turn-off delay time: 34 ns

Typical turn-on delay time: 13 ns

Part number alias: SP001565294