NDS352AP;

FET type P-channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 30V

Current - Continuous Drain (Id) (at 25°C) 900mA (Ta)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Different Id, Rds On (max) at Vgs 300 milliohms @ 1A, 10V

Vgs(th) (max) at different Id 2.5V @ 250μA

Gate charge (Qg) at different Vgs (max) 3nC @ 4.5V

Vgs (max) ±20V

Input Capacitance (Ciss) (Maximum) 135pF @ 15V at Vds

FET function-

Power dissipation (max) 500mW (Ta)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package SuperSOT-3

Package/Enclosure TO-236-3, SC-59, SOT-23-3

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