NTMFD4C85NT1G

FET Type 2 N-Channel (Dual) Asymmetric

FET Functional Standards

Drain-source voltage (Vdss) 30V

Current - Continuous Drain (Id) (at 25°C) 15.4A, 29.7A

Different Id, Rds On (max) at Vgs 3 milliohms @ 20A, 10V

Vgs(th) (max) at different Id 2.1V @ 250μA

Gate charge (Qg) at different Vgs (max) 32nC @ 10V

Input Capacitance (Ciss) at Vds (Maximum) 1960pF @ 15V

Power - 1.13W max

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Package/Case 8-PowerTDFN

Vendor Device Package 8-DFN (5x6)

NTMFD4C85NT1...