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FDC5661N Data Sheet

Manufacturer: ON Semiconductor

Product Category: MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: SSOT-6

Number of channels: 1 Channel

Transistor Polarity: N-Channel

Vds-drain-source breakdown voltage: 60 V

Id-Continuous Drain Current: 4.3 A

Rds On-Drain Source On Resistance: 47 mOhms

Vgs - Gate-Source Voltage: 20 V

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 1.6 W

Configuration: Single

Channel Mode: Enhancement

Qualification: AEC-Q101

Brand Name: UltraFET

Package: Cut Tape

Package: MouseReel

Package: Reel

Height: 1.1 mm

Length: 2.9 mm

Product: MOSFET Small Signal

Series: FDC5661N_F085

Transistor Type: 1 N-Channel

Type: Power Trench MOSFET

Width: 1.6 mm

Trademarks: ON Semiconductor / Fairchild

Fall Time: 3.1 ns

Product Type: MOSFET

Rise Time: 1.6 ns

Factory Packing Quantity: 3000

Subcategory: MOSFETs

Typical turn-off delay time: 19.3 ns

Typical turn-on delay time: 7.2 ns

Part number alias: FDC5661N_F085

Unit weight: 36 mg