Standard package 3,000

FET Type MOSFET N-Channel, Metal Oxide

FET FeaturesLogic Level Gate

Drain-to-source voltage (VDSS) 20V

Current - Continuous Drain (No.) @ 25°C 3.2A

Rds (max) @ ID, VGS 80 mOhm @ 3.6A, 4.5V

VGS (TH) (max) @ Id 1.2V @ 250µA

Gate Charge (Qg) @ VGS 6nC @ 4.5V

Input Capacitor (Ciss) @ 200pF of Vds @ 10V

Power - 1.25W max

Mounting Type Surface Mount

Bag/Box TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23-3 (TO-236)

Packaging Tape & Reel (TR)

Packaging 3SOT-23

Channel Mode Enhancement

Maximum drain-source voltage 20 V

Maximum continuous drain current 3.2 A

RDS - at 80@4.5V mOhm

Maximum gate-source voltage ±12 V

Typical turn-on delay time 6.5 ns

Typical turn-off delay time 12 ns

Typical fall time 3 ns

Operating temperature -55 to 150 °C

Install the Surface Mount

Standard Packaging Tape & Reel

Maximum gate-source voltage ±12

EU RoHS Directive Compliant

Maximum working temperature 150

Standard package name SOT-23

Minimum operating temperature -55

Channel TypeN

Package Tape and_Reel

Maximum drain-source resistance 80@4.5V

Maximum drain-source voltage 20

Number of components per chip 1

Supplier Package SOT-23

Maximum power dissipation 1250

Maximum continuous drain current 3.2

Number of pins 3

Lead Shape Gull-wing

FET Features Logic Level Gate, 2.5V Drive

Mounting Type Surface Mount

Current - Continuous Drain (Id ) @ 25 °C 3.2A (Ta)

Vgs(th) (max) @ Id 1.2V @ 250µA

Supplier Equipment Package SOT-23-3 (TO-236)

Other namesNTR4501NT1GOSTR

On-state Rds (max) @ Id, V GS 80 mOhm @ 3.6A, 4.5V

FET Type MOSFET N-Channel, Metal Oxide

Power - 1.25W max

Drain to source voltage (Vdss) 20V

Input Capacitance (Ciss) @ VDS 200pF @ 10V

Gate Charge (Qg) @ VGS 6nC @ 4.5V

Package/Enclosure TO-236-3, SC-59, SOT-23-3

RoHS Directive Lead free / RoHS Compliant

CategoryPower MOSFET

Configure Single

Dimensions 2.9 x 1.3 x 0.94mm

Height 0.94mm

Length 2.9mm

Maximum drain-source resistance 0.08 Ω

Maximum operating temperature +150 °C

Maximum power dissipation 1.25 W

Minimum operating temperature -55 °C

Packaging Type SOT-23

Typical Gate Charge @ VGS 2.4 nC V @ 4.5

Typical Input Capacitance @ VDS 200 pF V @ 10

Width 1.3mm

Drain current (max) 3.2 A

Frequency (max) Not Required MHz

Gate-source voltage (max) ?12 V

Output Power (Max) Not Required W

Power dissipation 1.25 W

Noise Figure Not Required dB

Drain-source on-resistance 0.08 ohm

Operating temperature range -55C to 150C

Polarity N

Type Power MOSFET

Number of components 1

Operating temperature classification Military

Drain efficiency Not Required %_ Drain-source turn-on voltage 20 V

Power Gain Not Required dB

Arc hardeningNo

Continuous drain current 3.2 A

Transistor Polarity: N Channel

Continuous Drain Current Id: 3.2A

Drain Source Voltage Vds: 20V

On Resistance Rds(on) :80mohm

Rds(on) Test Voltage Vgs:4.5V

Threshold Voltage Vgs:1.2V

Power consumption: 1.25W

Operating Temperature Min :-55°C

Operating Temperature Max :150°C

Transistor Case Style :SOT-23

No. of Pins :3

MSL :MSL 1 - Unlimited

SVHC: No SVHC (20-Jun-2013)

Current Id Max: 3.2A

Operating temperature range: -55°C to +150°C

Termination Type: SMD

Voltage Vds Typ: 20V

Voltage Vgs Max:1.2V

Voltage Vgs Rds on Measurement: 4.5V

Weight (kg) 0.000008

Tariff No. 85412900

associated IRLML2502TRPBF

PMV40UN215

IRLML6246TRPBF